new product ss3p4 www.vishay.com vishay general semiconductor revision: 19-jul-11 1 document number: 88954 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high current density surface mount schottky rectifiers typical applications for use in low voltage high frequency inverters, freewheeling, dc/dc converte rs and polarity protection applications. features ? very low profile - typical height of 1.0 mm ? ideal for automated placement ? low forward voltage drop, low power losses ? high efficiency ? low thermal resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition mechanical data case: do-220aa (smp) molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade base p/nhm3 - halogen-free, rohs compliant, and automotive grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 cla ss 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 3.0 a v rrm 40 v i fsm 50 a e as 11.25 mj v f 0.50 v t j max. 150 c do-220aa ( s mp) e s mp ? s eries maximum ratings (t a = 25 c unless otherwise noted) parameter symbol ss3p4 unit device marking code 34 maximum repetitive pe ak reverse voltage v rrm 40 v maximum average forward rectified current (fig. 1) i f(av) 3.0 a peak forward surge current 8.3 ms si ngle half sine-w ave superimposed on rated load i fsm 50 a non-repetitive avalanche energy at t j = 25 c, i as = 1.5 a, l = 10 mh e as 11.25 mj voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 55 to + 150 c
new product ss3p4 www.vishay.com vishay general semiconductor revision: 19-jul-11 2 document number: 88954 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms note (1) thermal resistance from junction to ambient and junction to le ad mounted on p.c.b. with 5.0 mm x 5.0 mm copper pad areas. r ? jl is measured at the terminal of cathode band. r ? jc is measured at the top center of the body note (1) automotive grade ratings and characteristics curves (t a = 25 ? c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward voltage i f = 3 a t j = 25 c v f (1) 0.55 0.60 v t j = 125 c 0.50 0.55 maximum reverse current at rated v r t j = 25 c i r (2) - 150 a t j = 125 c 7.5 50 ma typical junction capa citance 4.0 v, 1 mhz c j 130 pf thermal characteristics (t a = 25 c unless otherwise specified) parameter symbol ss3p4 unit typical thermal resistance (1) r ? ja (1) 85 c/w r ? jl (1) 15 r ? jc (1) 20 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode ss3p4-m3/84a 0.024 84a 3000 7" diamet er plastic tape and reel ss3p4-m3/85a 0.024 85a 10 000 13" diam eter plastic tape and reel ss3p4hm3/84a (1) 0.024 84a 3000 7" diameter plastic tape and reel ss3p4hm3/85a (1) 0.024 85a 10 000 13" diameter plastic tape and reel 3.0 2.5 2.0 1.5 1.0 0.5 0 80 90 100 110 120 130 140 150 lead temperature (c) t l measured at the cathode band terminal average forward rectified current (a) 50 40 30 20 10 0 1 10 100 number of cycles at 50 hz peak forward surge current (a)
new product ss3p4 www.vishay.com vishay general semiconductor revision: 19-jul-11 3 document number: 88954 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical junction capacitance fig. 6 - typical tran sient thermal impedance package outline dimensions in inches (millimeters) 0.1 0.3 0.5 0.7 0.9 1.1 1.3 0.1 10 1 100 instantaneous forward voltage (v) instantaneous forward current (a) t j = 150 c t j = 125 c t j = 25 c 10 20 30 40 50 60 70 80 90 100 100 000 10 000 1000 100 10 1 0.1 percent of rated peak reverse voltage (%) t j = 150 c t j = 125 c t j = 25 c instantaneous reverse leakage current (a) 0.1 1 10 100 1000 100 10 reverse voltage (v) junction capacitance (pf) 0.01 0.1 1 10 100 1000 100 10 1 t - pulse duration (s) transient thermal impedance (c/w) do-220aa ( s mp) cathode band 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.013 (0.35) 0.004 (0.10) 0.012 (0.30) 0.000 (0.00) 0.018 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0.85) 0.036 (0.91) 0.024 (0.61) 0.032 (0.80) 0.016 (0.40) 0.103 (2.60) 0.087 (2.20) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) ref. 0.100 (2.54) 0.105 (2.67) 0.025 (0.635) 0.030 (0.762) 0.050 (1.27)
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